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  • RFP30N06LE

RFP30N06LE

RFP30N06LE datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-RFP30N06LE
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 910
  • Description: RFP30N06LE datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 30A
Lead Pitch 2.54mm
Number of Elements 1
Power Dissipation-Max 96W Tc
Element Configuration Single
Power Dissipation 96W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 47mOhm @ 30A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Ta
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Rise Time 88ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +10V, -8V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Input Capacitance 1.35nF
Drain to Source Resistance 47mOhm
Rds On Max 47 mΩ
Nominal Vgs 2 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet