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  • RJH1CV7DPQ-E0#T2

RJH1CV7DPQ-E0#T2

Trans IGBT Chip N-CH 1.2KV 70A 3-Pin(3+Tab) TO-247 Tube


  • Manufacturer: Renesas Electronics America
  • Origchip NO: 668-RJH1CV7DPQ-E0#T2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 808
  • Description: Trans IGBT Chip N-CH 1.2KV 70A 3-Pin(3+Tab) TO-247 Tube (Kg)

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Our sales will reply to your request by email within 24 hours.

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 320W
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 320W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 70A
Reverse Recovery Time 200 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 98 ns
Test Condition 600V, 35A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 35A
Turn Off Time-Nom (toff) 465 ns
IGBT Type Trench
Gate Charge 166nC
Td (on/off) @ 25°C 53ns/185ns
Switching Energy 3.2mJ (on), 2.5mJ (off)
Gate-Emitter Thr Voltage-Max 8V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet