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RK7002T116

MOSFET N-CH 60V 115MA SOT-23


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-RK7002T116
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 639
  • Description: MOSFET N-CH 60V 115MA SOT-23 (Kg)

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Details

Tags

Parameters
REACH SVHC No SVHC
Published 1998
RoHS Status ROHS3 Compliant
Lead Free Lead Free
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 7.5Ohm
Terminal Finish TIN SILVER COPPER
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 115mA
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Power Dissipation-Max 225mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 225mW
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 115mA Ta
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Contact Plating Copper, Silver, Tin
Vgs (Max) ±20V
Mount Surface Mount
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 115mA
Mounting Type Surface Mount
Threshold Voltage 1.85V
Package / Case TO-236-3, SC-59, SOT-23-3
Gate to Source Voltage (Vgs) 20V
Number of Pins 3
Drain Current-Max (Abs) (ID) 0.115A
Transistor Element Material SILICON
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Nominal Vgs 1.85 V
Operating Temperature 150°C TJ
Feedback Cap-Max (Crss) 5 pF
Packaging Tape & Reel (TR)
Radiation Hardening No
See Relate Datesheet