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RN1964FE(TE85L,F)

Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V


  • Manufacturer: Toshiba Semiconductor and Storage
  • Origchip NO: 830-RN1964FE(TE85L,F)
  • Package: SOT-563, SOT-666
  • Datasheet: -
  • Stock: 500
  • Description: Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 100mW
Number of Elements 2
Polarity NPN
Element Configuration Dual
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 10V
hFE Min 80
Resistor - Base (R1) 47k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
See Relate Datesheet