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  • RTQ025P02TR

RTQ025P02TR

MOSFET P-CH 20V 2.5A TSMT6


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-RTQ025P02TR
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 675
  • Description: MOSFET P-CH 20V 2.5A TSMT6 (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -2.5A
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.25W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 580pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 4.5V
Rise Time 20ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.11Ohm
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet