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RTU002P02T106

MOSFET P-CH 20V 0.25A SOT-323


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-RTU002P02T106
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 649
  • Description: MOSFET P-CH 20V 0.25A SOT-323 (Kg)

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Details

Tags

Parameters
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 250mA, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C 250mA Ta
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 35 ns
Factory Lead Time 7 Weeks
Continuous Drain Current (ID) 250mA
Contact Plating Copper, Silver, Tin
Threshold Voltage -700mV
Mount Surface Mount
Gate to Source Voltage (Vgs) 12V
Mounting Type Surface Mount
Drain to Source Breakdown Voltage -20V
Package / Case SC-70, SOT-323
Nominal Vgs -700 mV
Number of Pins 3
Radiation Hardening No
REACH SVHC No SVHC
Transistor Element Material SILICON
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.5Ohm
Terminal Finish TIN SILVER COPPER
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Voltage 20V
Power Dissipation-Max 200mW Ta
Element Configuration Single
Current 25A
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Turn On Delay Time 9 ns
See Relate Datesheet