English

All Products

View All >>
  • RUR040N02TL

RUR040N02TL

MOSFET N-CH 20V 4A TSMT3


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-RUR040N02TL
  • Package: SC-96
  • Datasheet: PDF
  • Stock: 921
  • Description: MOSFET N-CH 20V 4A TSMT3 (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.046Ohm
Drain to Source Breakdown Voltage 20V
Nominal Vgs 300 mV
Height 800μm
Length 2.9mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet