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RV1C001ZPT2L

MOSFET P-CH 20V 0.1A VML0806


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-RV1C001ZPT2L
  • Package: 3-SMD, No Lead
  • Datasheet: PDF
  • Stock: 547
  • Description: MOSFET P-CH 20V 0.1A VML0806 (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max 100mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 100mW
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 15pF @ 10V
Current - Continuous Drain (Id) @ 25°C 100mA Ta
Rise Time 62ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 137 ns
Turn-Off Delay Time 325 ns
Continuous Drain Current (ID) 100mA
Drain Current-Max (Abs) (ID) 0.1A
Drain to Source Breakdown Voltage -20V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet