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RYM002N05T2CL

MOSFET N-CH 50V 0.2A VMT3


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-RYM002N05T2CL
  • Package: SOT-723
  • Datasheet: PDF
  • Stock: 220
  • Description: MOSFET N-CH 50V 0.2A VMT3 (Kg)

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Details

Tags

Parameters
JESD-30 Code R-PDSO-F3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 800mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 0.9V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 43 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 2.8Ohm
Drain to Source Breakdown Voltage 50V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
See Relate Datesheet