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  • RZF030P01TL

RZF030P01TL

MOSFET P-CH 12V 3A TUMT3


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-RZF030P01TL
  • Package: 3-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 793
  • Description: MOSFET P-CH 12V 3A TUMT3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 39MOhm
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Power Dissipation-Max 800mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 800mW
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1860pF @ 6V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time 40ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 120 ns
Turn-Off Delay Time 210 ns
Continuous Drain Current (ID) 3A
Threshold Voltage -300mV
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage -12V
Nominal Vgs -300 mV
Height 770μm
Length 2mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet