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  • RZR040P01TL

RZR040P01TL

MOSFET P-CH 12V 4A TSMT3


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-RZR040P01TL
  • Package: SC-96
  • Datasheet: PDF
  • Stock: 735
  • Description: MOSFET P-CH 12V 4A TSMT3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 6V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V
Rise Time 70ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 210 ns
Turn-Off Delay Time 380 ns
Continuous Drain Current (ID) 4A
Threshold Voltage -300mV
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage -12V
Nominal Vgs -300 mV
Height 850μm
Length 2.9mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet