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  • SBSS84LT1G

SBSS84LT1G

SBSS84LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-SBSS84LT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 194
  • Description: SBSS84LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 225mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 225mW
Turn On Delay Time 3.6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 5V
Current - Continuous Drain (Id) @ 25°C 130mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 10V
Rise Time 9.7ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Fall Time (Typ) 1.7 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) -130mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -50V
Max Junction Temperature (Tj) 150°C
Height 1.11mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet