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SCT20N120

MOSFET 1200V silicon carbide MOSFET


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-SCT20N120
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 333
  • Description: MOSFET 1200V silicon carbide MOSFET (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Operating Temperature -55°C~200°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number SCT20
Number of Channels 1
Power Dissipation-Max 175W Tc
Element Configuration Single
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 290m Ω @ 10A, 20V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 400V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 20V
Rise Time 16ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 1.2kV
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet