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  • SCT2160KEC

SCT2160KEC

MOSFET N-CH 1200V 22A TO-247


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-SCT2160KEC
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 111
  • Description: MOSFET N-CH 1200V 22A TO-247 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 19 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature 175°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 160mOhm
Technology SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 165W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 208m Ω @ 7A, 18V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 800V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 62nC @ 18V
Rise Time 25ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -6V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 67 ns
Continuous Drain Current (ID) 22A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 4V
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 55A
Nominal Vgs 4 V
Height 5.03mm
Length 15.9mm
Width 20.95mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet