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SCT2280KEC

MOSFET N-CH 1200V 14A TO-247


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-SCT2280KEC
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 828
  • Description: MOSFET N-CH 1200V 14A TO-247 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 19 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature 175°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 280mOhm
Technology SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 108W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 364m Ω @ 4A, 18V
Vgs(th) (Max) @ Id 4V @ 1.4mA
Input Capacitance (Ciss) (Max) @ Vds 667pF @ 800V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 18V
Rise Time 19ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -6V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 22V
Drain to Source Breakdown Voltage 1.2kV
Nominal Vgs 4 V
Height 5.03mm
Length 15.9mm
Width 20.95mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet