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SCT3120ALGC11

MOSFET NCH 650V 21A TO247N


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-SCT3120ALGC11
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 965
  • Description: MOSFET NCH 650V 21A TO247N (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature 175°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 103W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 103W
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 156m Ω @ 6.7A, 18V
Vgs(th) (Max) @ Id 5.6V @ 3.33mA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 500V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 18V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -4V
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 21A
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 52A
Max Junction Temperature (Tj) 175°C
Height 25.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet