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SCT50N120

SCT50N120 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-SCT50N120
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 472
  • Description: SCT50N120 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vgs (Max) +25V, -10V
Continuous Drain Current (ID) 65A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 25V
Max Junction Temperature (Tj) 200°C
Height 24.45mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Manufacturer Package Identifier HiP247-8396756
Operating Temperature -55°C~200°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Base Part Number SCT50
Number of Channels 1
Power Dissipation-Max 318W Tc
Power Dissipation 318W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 69m Ω @ 40A, 20V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 400V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Gate Charge (Qg) (Max) @ Vgs 122nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
See Relate Datesheet