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SGB06N60ATMA1

SGB06N60ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SGB06N60ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 200
  • Description: SGB06N60ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 68W
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 68W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 12A
Collector Emitter Breakdown Voltage 600V
Turn On Time 41 ns
Test Condition 400V, 6A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 6A
Turn Off Time-Nom (toff) 318 ns
IGBT Type NPT
Gate Charge 32nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 25ns/220ns
Switching Energy 215μJ
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet