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SGF5N150UFTU

SGF5N150UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-SGF5N150UFTU
  • Package: TO-3P-3 Full Pack
  • Datasheet: PDF
  • Stock: 512
  • Description: SGF5N150UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 44 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3
Weight 6.962g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.5kV
Max Power Dissipation 62.5W
Current Rating 5A
Number of Elements 1
Element Configuration Single
Power Dissipation 62.5W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 10 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 30 ns
Collector Emitter Voltage (VCEO) 1.5kV
Max Collector Current 10A
Collector Emitter Breakdown Voltage 1.5kV
Voltage - Collector Emitter Breakdown (Max) 1500V
Collector Emitter Saturation Voltage 4.7V
Turn On Time 25 ns
Test Condition 600V, 5A, 10 Ω, 10V
Vce(on) (Max) @ Vge, Ic 5.5V @ 10V, 5A
Turn Off Time-Nom (toff) 100 ns
Gate Charge 30nC
Current - Collector Pulsed (Icm) 20A
Td (on/off) @ 25°C 10ns/30ns
Switching Energy 190μJ (on), 100μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 4V
Fall Time-Max (tf) 120ns
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet