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SGH40N60UFTU

SGH40N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-SGH40N60UFTU
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 886
  • Description: SGH40N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 160W
Current Rating 20A
Base Part Number SG*40N60
Number of Elements 1
Element Configuration Single
Power Dissipation 160W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 67 ns
Test Condition 300V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 20A
Turn Off Time-Nom (toff) 254 ns
Gate Charge 97nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 15ns/65ns
Switching Energy 160μJ (on), 200μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 280ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet