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SGL50N60RUFDTU

SGL50N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-SGL50N60RUFDTU
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 481
  • Description: SGL50N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 26ns/66ns
Switching Energy 1.68mJ (on), 1.03mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8V
Fall Time-Max (tf) 160ns
Height 26mm
Length 20mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 11 hours ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 6.756g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 100V
Max Power Dissipation 250W
Current Rating 40A
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Input Type Standard
Turn On Delay Time 26 ns
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 66 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 100ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 119 ns
Test Condition 300V, 50A, 5.9 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 50A
Continuous Collector Current 80A
Turn Off Time-Nom (toff) 329 ns
Gate Charge 145nC
See Relate Datesheet