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SGP23N60UFDTU

SGP23N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-SGP23N60UFDTU
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 101
  • Description: SGP23N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 36 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 12 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 23A
Base Part Number SG*23N60
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 23A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 55 ns
Test Condition 300V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 12A
Turn Off Time-Nom (toff) 320 ns
Gate Charge 49nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 17ns/60ns
Switching Energy 115μJ (on), 135μJ (off)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet