English

All Products

View All >>
  • SI1012CR-T1-GE3

SI1012CR-T1-GE3

VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI1012CR-T1-GE3
  • Package: SC-75, SOT-416
  • Datasheet: PDF
  • Stock: 102
  • Description: VISHAY - SI1012CR-T1-GE3 - Power MOSFET, N Channel, 20 V, 630 mA, 0.33 ohm, SC-75A, Surface Mount (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 396mOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 240mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 240mW
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 396m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2nC @ 8V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 630mA
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Factory Lead Time 14 Weeks
Max Junction Temperature (Tj) 150°C
Mount Surface Mount
Height 800μm
Length 1.68mm
Mounting Type Surface Mount
Width 860μm
Package / Case SC-75, SOT-416
Radiation Hardening No
Number of Pins 3
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Weight 2.012816mg
Lead Free Lead Free
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
See Relate Datesheet