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  • SI1013X-T1-GE3

SI1013X-T1-GE3

MOSFET P-CH 20V 350MA SC89-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI1013X-T1-GE3
  • Package: SC-89, SOT-490
  • Datasheet: PDF
  • Stock: 484
  • Description: MOSFET P-CH 20V 350MA SC89-3 (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Rise Time 9ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -400mA
Threshold Voltage -450mV
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage -20V
Height 800μm
Length 1.7mm
Width 950μm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3
Weight 29.993795mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.2Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 250mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
Turn On Delay Time 5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 350mA Ta
See Relate Datesheet