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  • SI1022R-T1-GE3

SI1022R-T1-GE3

MOSFET 60V 330mA 250mW 1.25ohm @ 10V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI1022R-T1-GE3
  • Package: SC-75A
  • Datasheet: PDF
  • Stock: 431
  • Description: MOSFET 60V 330mA 250mW 1.25ohm @ 10V (Kg)

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Details

Tags

Parameters
Resistance 3Ohm
Additional Feature LOW THRESHOLD
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 250mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.25 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V
Current - Continuous Drain (Id) @ 25°C 330mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 330mA
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 60V
Height 700μm
Length 1.58mm
Width 760μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75A
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
See Relate Datesheet