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SI1031R-T1-GE3

MOSFET 20V 150mA 280mW 8.0ohm @ 4.5V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI1031R-T1-GE3
  • Package: SC-75A
  • Datasheet: PDF
  • Stock: 273
  • Description: MOSFET 20V 150mA 280mW 8.0ohm @ 4.5V (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75A
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 8Ohm
Additional Feature LOW THRESHOLD
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 250mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
Turn On Delay Time 55 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8 Ω @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 140mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Rise Time 30ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 140mA
Threshold Voltage 900mV
Gate to Source Voltage (Vgs) 6V
DS Breakdown Voltage-Min 20V
Height 700μm
Length 1.58mm
Width 760μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet