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  • SI1302DL-T1-GE3

SI1302DL-T1-GE3

MOSFET N-CH 30V 600MA SC-70-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI1302DL-T1-GE3
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 915
  • Description: MOSFET N-CH 30V 600MA SC-70-3 (Kg)

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Details

Tags

Parameters
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 280mW Ta
Factory Lead Time 14 Weeks
Element Configuration Single
Mount Surface Mount
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5 ns
Mounting Type Surface Mount
FET Type N-Channel
Package / Case SC-70, SOT-323
Rds On (Max) @ Id, Vgs 480m Ω @ 600mA, 10V
Number of Pins 3
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 600mA Ta
Weight 6.208546mg
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V
Rise Time 8ns
Transistor Element Material SILICON
Drain to Source Voltage (Vdss) 30V
Operating Temperature -55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Packaging Tape & Reel (TR)
Fall Time (Typ) 7 ns
Published 2016
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 600mA
Series TrenchFET®
JESD-609 Code e3
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.6A
Drain-source On Resistance-Max 0.48Ohm
Pbfree Code yes
Radiation Hardening No
RoHS Status ROHS3 Compliant
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
See Relate Datesheet