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  • SI1317DL-T1-GE3

SI1317DL-T1-GE3

VISHAY - SI1317DL-T1-GE3 - MOSFET, P CH, W/D, 20V, 1.4A, SOT323


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI1317DL-T1-GE3
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 385
  • Description: VISHAY - SI1317DL-T1-GE3 - MOSFET, P CH, W/D, 20V, 1.4A, SOT323 (Kg)

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 400mW
Turn On Delay Time 12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 1.4A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 272pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Rise Time 30ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) -1.4A
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 124.596154mg
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Tc
Element Configuration Single
See Relate Datesheet