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SI1413EDH-T1-E3

MOSFET P-CH 20V 2.3A SC70-6


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI1413EDH-T1-E3
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 876
  • Description: MOSFET P-CH 20V 2.3A SC70-6 (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 115mOhm
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 750 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 115m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 100μA (Min)
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Rise Time 1.6μs
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 1.6 μs
Turn-Off Delay Time 3.9 μs
Continuous Drain Current (ID) -2.9A
Threshold Voltage -450mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2.3A
Drain to Source Breakdown Voltage 20V
Nominal Vgs -450 mV
Height 990.6μm
Length 2.1844mm
Width 1.3462mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet