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SI1416EDH-T1-GE3

Trans MOSFET N-CH 30V 3.9A 6-Pin SC-70 T/R


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI1416EDH-T1-GE3
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 947
  • Description: Trans MOSFET N-CH 30V 3.9A 6-Pin SC-70 T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28.009329mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56W
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.9A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 60ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.058Ohm
Drain to Source Breakdown Voltage 30V
Height 1mm
Length 2.2mm
Width 1.35mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet