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  • SI1427EDH-T1-GE3

SI1427EDH-T1-GE3

VISHAY SI1427EDH-T1-GE3 MOSFET Transistor, P Channel, -2 A, -20 V, 0.05 ohm, -4.5 V, -400 mV


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI1427EDH-T1-GE3
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 281
  • Description: VISHAY SI1427EDH-T1-GE3 MOSFET Transistor, P Channel, -2 A, -20 V, 0.05 ohm, -4.5 V, -400 mV (Kg)

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Details

Tags

Parameters
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage -20V
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2012
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Number of Channels 1
Power Dissipation-Max 1.56W Ta 2.8W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56W
Turn On Delay Time 90 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 64m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 8V
Rise Time 400ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 2.3 μs
Turn-Off Delay Time 5.2 μs
Continuous Drain Current (ID) 2A
See Relate Datesheet