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  • SI1473DH-T1-E3

SI1473DH-T1-E3

MOSFET P-CH 30V 2.7A SC70-6


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI1473DH-T1-E3
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 103
  • Description: MOSFET P-CH 30V 2.7A SC70-6 (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 7.512624mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta 2.78W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 4 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 365pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.7A Tc
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
Rise Time 10ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 1.6A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.8A
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 8A
Nominal Vgs -3 V
Height 1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet