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  • SI1499DH-T1-E3

SI1499DH-T1-E3

MOSFET P-CH 8V 1.6A SC70-6


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI1499DH-T1-E3
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 761
  • Description: MOSFET P-CH 8V 1.6A SC70-6 (Kg)

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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 7.512624mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 78mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 2.78W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 78m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 4V
Current - Continuous Drain (Id) @ 25°C 1.6A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Rise Time 40ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 1.6A
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) 5V
DS Breakdown Voltage-Min 8V
Nominal Vgs -800 mV
Height 1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
REACH SVHC Unknown
See Relate Datesheet