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  • SI2301-TP

SI2301-TP

MOSFET P-CH 20V 2.8A SOT-23


  • Manufacturer: Micro Commercial Co
  • Origchip NO: 543-SI2301-TP
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 168
  • Description: MOSFET P-CH 20V 2.8A SOT-23 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.25W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 6V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Drain Current-Max (Abs) (ID) 2.8A
Drain-source On Resistance-Max 0.12Ohm
Pulsed Drain Current-Max (IDM) 10A
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
See Relate Datesheet