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  • SI2301BDS-T1-E3

SI2301BDS-T1-E3

VISHAY - SI2301BDS-T1-E3 - P CHANNEL MOSFET, FULL REEL


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2301BDS-T1-E3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 517
  • Description: VISHAY - SI2301BDS-T1-E3 - P CHANNEL MOSFET, FULL REEL (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 100MOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 20 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 375pF @ 6V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 40ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) -2.2A
Threshold Voltage -950mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -950 mV
Height 1.12mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet