All Products
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RF/IF & RFID
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Vishay Siliconix(2369)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Max Output Current | Case Connection | Row Spacing | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI2301BDS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.4mm | 100MOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 700mW | 20 ns | -950mV | 700mW Ta | -2.2A | 150°C | 30 ns | SILICON | P-Channel | 100m Ω @ 2.8A, 4.5V | 950mV @ 250μA | 375pF @ 6V | 10nC @ 4.5V | 40ns | 40 ns | 8V | -20V | -950 mV | 2.2A Ta | 20V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| SI2302CDS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.4mm | 57mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Powers | 1 | Single | 710mW | 8 ns | 400mV | 710mW Ta | 2.6A | 150°C | SWITCHING | 30 ns | SILICON | N-Channel | 57m Ω @ 3.6A, 4.5V | 850mV @ 250μA | 5.5nC @ 4.5V | 7ns | 7 ns | 8V | 20V | 2.6A Ta | 112pF | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| TP0610K-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | ESD PROTECTION, LOW THRESHOLD | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.4mm | 10Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 20 | 3 | 1 | Other Transistors | 1 | Single | 350mW | 20 ns | -3V | 350mW Ta | -185mA | 150°C | SWITCHING | 35 ns | SILICON | P-Channel | 6 Ω @ 500mA, 10V | 3V @ 250μA | 23pF @ 25V | 1.7nC @ 15V | 20V | -60V | -3 V | 185mA Ta | 60V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4156DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | unknown | 6mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | Not Qualified | 1 | Single | 2.5W | 25 ns | 2.2V | 2.5W Ta 6W Tc | 24A | SWITCHING | 25 ns | SILICON | N-Channel | 6m Ω @ 15.7A, 10V | 2.2V @ 250μA | 1700pF @ 15V | 42nC @ 10V | 20ns | 15 ns | 20V | 30V | 24A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI4825DDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | 12.5MOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 2.7W | 48 ns | -1.4V | 2.7W Ta 5W Tc | 10.9A | SWITCHING | 34 ns | SILICON | P-Channel | 12.5m Ω @ 10A, 10V | 2.5V @ 250μA | 2550pF @ 15V | 86nC @ 10V | 92ns | 19 ns | 25V | -30V | 14.9A Tc | 30V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| IRFZ24PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 100mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 60W | 13 ns | 4V | 60W Tc | 17A | SWITCHING | 25 ns | SILICON | N-Channel | 100m Ω @ 10A, 10V | 4V @ 250μA | 640pF @ 25V | 25nC @ 10V | 58ns | 42 ns | 20V | 60V | 17A Tc | 68A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIR826DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2011 | TrenchFET® | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 6.25W | 15 ns | 1.2V | 4mOhm | PowerPAK® SO-8 | 6.25W Ta 104W Tc | 60A | 36 ns | N-Channel | 4.8mOhm @ 20A, 10V | 2.8V @ 250μA | 2900pF @ 40V | 90nC @ 10V | 14ns | 8 ns | 20V | 60A Tc | 80V | 2.9nF | 4.5V 10V | ±20V | 4.8 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7439DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | ULTRA LOW-ON RESISTANCE | PowerPAK® SO-8 | No SVHC | 1.12mm | 5.89mm | 90mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - annealed | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | Other Transistors | 1 | DRAIN | Single | 1.9W | 25 ns | -4V | 1.9W Ta | -5.2A | 150°C | SWITCHING | 115 ns | SILICON | P-Channel | 90m Ω @ 5.2A, 10V | 4V @ 250μA | 135nC @ 10V | 46ns | 46 ns | 20V | -150V | -4 V | 3A | 3A Ta | 150V | 50A | 6V 10V | ±20V | ||||||||||||||||||||||||||||
| SI7439DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | ULTRA LOW-ON RESISTANCE | PowerPAK® SO-8 | No SVHC | 1.12mm | 5.89mm | 90mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | Other Transistors | 1 | DRAIN | Single | 1.9W | 25 ns | -4V | 1.9W Ta | -5.2A | 150°C | SWITCHING | 115 ns | SILICON | P-Channel | 90m Ω @ 5.2A, 10V | 4V @ 250μA | 135nC @ 10V | 46ns | 46 ns | 20V | -150V | 3A | 3A Ta | 150V | 50A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
| SQM120N06-3M5L_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.41mm | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.826mm | 9.652mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | Single | 19 ns | 2V | 375W Tc | 120A | 60V | 83 ns | SILICON | N-Channel | 3.5m Ω @ 29A, 10V | 2.5V @ 250μA | 14700pF @ 25V | 330nC @ 10V | 23ns | 35 ns | 20V | 120A Tc | 60V | 480A | 500 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF740PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | Through Hole | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | Tin | 10A | No | 3 | TO-220-3 | Unknown | 19.89mm | 4.7mm | 550MOhm | Through Hole | 6.000006g | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 14 ns | 4V | 550mOhm | TO-220AB | 125W Tc | 790 ns | 10A | 150°C | 50 ns | N-Channel | 550mOhm @ 6A, 10V | 4V @ 250μA | 1400pF @ 25V | 63nC @ 10V | 27ns | 24 ns | 20V | 400V | 400V | 4 V | 10A Tc | 400V | 1.4nF | 10V | ±20V | 550 mΩ | |||||||||||||||||||||||||||||||||||
| SIR800DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | Unknown | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 5.2W | 27 ns | 600mV | 5.2W Ta 69W Tc | 50A | 0.0023Ohm | 70 ns | SILICON | N-Channel | 2.3m Ω @ 15A, 10V | 1.5V @ 250μA | 5125pF @ 10V | 133nC @ 10V | 15ns | 27 ns | 12V | 20V | 600 mV | 35.4A | 50A Tc | 45 mJ | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||
| IRFD110PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 3 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | 1A | 4 | 4-DIP (0.300, 7.62mm) | Unknown | 2.54mm | 4.57mm | 6.29mm | 540mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PDIP-T3 | 1 | Not Qualified | 1 | DRAIN | 7.62 mm | Single | 1.3W | 6.9 ns | 4V | 1.3W Ta | 200 ns | 1A | 175°C | SWITCHING | 15 ns | SILICON | N-Channel | 540m Ω @ 600mA, 10V | 4V @ 250μA | 180pF @ 25V | 8.3nC @ 10V | 16ns | 16 ns | 20V | 100V | 100V | 4 V | 1A | 1A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||
| SI4488DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5494mm | 3.9878mm | 50mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | 8 | 1 | FET General Purpose Powers | 1 | Single | 1.56W | 12 ns | 2V | 1.56W Ta | 5A | 22 ns | SILICON | N-Channel | 50m Ω @ 5A, 10V | 2V @ 250μA (Min) | 36nC @ 10V | 7ns | 7 ns | 20V | 150V | 2 V | 3.5A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF9510PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 175°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | -4A | No | 3 | TO-220-3 | Unknown | 19.89mm | 4.7mm | 1.2Ohm | Through Hole | 6.000006g | -55°C~175°C TJ | -100V | MOSFET (Metal Oxide) | 1 | 1 | Single | 43W | 10 ns | -2V | 1.2Ohm | TO-220AB | 43W Tc | 160 ns | -4A | 175°C | 15 ns | P-Channel | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 200pF @ 25V | 8.7nC @ 10V | 27ns | 17 ns | 20V | -100V | -4 V | 4A Tc | 100V | 200pF | 10V | ±20V | 1.2 Ω | ||||||||||||||||||||||||||||||||||||||
| IRLD110PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 175°C | -55°C | 5mm | ROHS3 Compliant | Lead Free | 1A | No | 4 | 4-DIP (0.300, 7.62mm) | Unknown | 3.37mm | 6.29mm | 540mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | 1 | Single | 1.3W | 9.3 ns | 2V | 540mOhm | 4-DIP, Hexdip, HVMDIP | 1.3W Ta | 1A | 16 ns | N-Channel | 540mOhm @ 600mA, 5V | 2V @ 250μA | 250pF @ 25V | 6.1nC @ 5V | 47ns | 47 ns | 10V | 100V | 2 V | 1A Ta | 100V | 250pF | 4V 5V | ±10V | 540 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SI7812DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | No SVHC | 1.12mm | 3.05mm | 37mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 3.8W | 15 ns | 1V | 3.8W Ta 52W Tc | 7.2A | 150°C | SWITCHING | 35 ns | SILICON | N-Channel | 37m Ω @ 7.2A, 10V | 3V @ 250μA | 840pF @ 35V | 24nC @ 10V | 20ns | 10 ns | 20V | 75V | 16A Tc | 25A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIR404DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 6.15mm | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | 1.04mm | 5.15mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 6.25W | 35 ns | 6.25W Ta 104W Tc | 45.6A | 123 ns | SILICON | N-Channel | 1.6m Ω @ 20A, 10V | 1.5V @ 250μA | 8130pF @ 10V | 97nC @ 4.5V | 20ns | 26 ns | 12V | 20V | 60A | 60A Tc | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||
| SI7115DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | 1.04mm | 3.05mm | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | Other Transistors | 1 | DRAIN | Single | 3.7W | 11 ns | 52W Tc | 2.3A | SWITCHING | 0.295Ohm | 52 ns | SILICON | P-Channel | 295m Ω @ 4A, 10V | 4V @ 250μA | 1190pF @ 50V | 42nC @ 10V | 28ns | 35 ns | 20V | -150V | 8.9A Tc | 150V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SQS484ENW-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | PowerPAK® 1212-8 | unknown | 1.17mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | YES | S-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 62.5W | 11 ns | 62.5W Tc | 16A | 175°C | 25 ns | SILICON | N-Channel | 8m Ω @ 10A, 10V | 2.5V @ 250μA | 1800pF @ 25V | 35nC @ 10V | 20V | 40V | 16A Tc | 64A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3460BDV-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | Tin | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 1mm | 1.65mm | 27mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 6 | 1 | FET General Purpose Power | 1 | 2A | Single | 2W | 5 ns | 1V | 2W Ta 3.5W Tc | 8A | SWITCHING | 25 ns | SILICON | N-Channel | 27m Ω @ 5.1A, 4.5V | 1V @ 250μA | 860pF @ 10V | 24nC @ 8V | 15ns | 5 ns | 8V | 20V | 1 V | 8A | 8A Tc | 20A | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| TN2404K-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Powers | 1 | Single | 360mW | 5 ns | 800mV | 360mW Ta | 200mA | SWITCHING | 4Ohm | 35 ns | SILICON | N-Channel | 4 Ω @ 300mA, 10V | 2V @ 250μA | 8nC @ 10V | 12ns | 16 ns | 20V | 240V | 800 mV | 0.2A | 200mA Ta | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI3437DV-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 1mm | 1.65mm | 750mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | 6 | 1 | Other Transistors | 1 | 2A | Single | 2W | 14 ns | -4V | 2W Ta 3.2W Tc | 1.1A | 23 ns | SILICON | P-Channel | 750m Ω @ 1.4A, 10V | 4V @ 250μA | 510pF @ 50V | 19nC @ 10V | 29ns | 14 ns | 20V | -150V | -4 V | 1.4A Tc | 150V | 5A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SISS27ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen III | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® 1212-8S | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 57W Tc | P-Channel | 5.1m Ω @ 15A, 10V | 2.2V @ 250μA | 4660pF @ 15V | 55nC @ 4.5V | 50A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4464DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.55mm | 4mm | 240mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | 8 | 1 | FET General Purpose Power | 1 | Single | 1.5W | 10 ns | 1.5W Ta | 1.7A | SWITCHING | 200V | 15 ns | SILICON | N-Channel | 240m Ω @ 2.2A, 10V | 4V @ 250μA | 18nC @ 10V | 12ns | 15 ns | 20V | 1.7A Ta | 200V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI4686DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.55mm | 4mm | 9.5mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Power | 1 | Single | 3W | 20 ns | 1V | 3W Ta 5.2W Tc | 18.2A | SWITCHING | 20 ns | SILICON | N-Channel | 9.5m Ω @ 13.8A, 10V | 3V @ 250μA | 1220pF @ 15V | 26nC @ 10V | 20ns | 8 ns | 20V | 30V | 18.2A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4874BDY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | 7mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Power | 1 | Single | 1.6W | 16 ns | 3V | 1.6W Ta | 16A | 30V | 57 ns | SILICON | N-Channel | 7m Ω @ 16A, 10V | 3V @ 250μA | 3230pF @ 15V | 25nC @ 4.5V | 10ns | 10 ns | 20V | 12A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SUD19P06-60-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.507mm | 6.22mm | 60mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 4 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 2.3W | 8 ns | -1V | 2.3W Ta 38.5W Tc | -19A | 150°C | SWITCHING | 65 ns | SILICON | P-Channel | 60m Ω @ 10A, 10V | 3V @ 250μA | 1710pF @ 25V | 40nC @ 10V | 9ns | 30 ns | 20V | -60V | 18.3A Tc | 60V | 24.2 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SQJ407EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | RoHS Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | 260 | NOT SPECIFIED | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W | 23 ns | 68W Tc | -60A | 175°C | 0.0044Ohm | 72 ns | SILICON | P-Channel | 4.4m Ω @ 10A, 10V | 2.5V @ 250μA | 10700pF @ 25V | 260nC @ 10V | 20V | -30V | 60A Tc | 30V | 84 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7101DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | No SVHC | 1.12mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | S-PDSO-C5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.7W | 12 ns | -1.2V | 3.7W Ta 52W Tc | -16.9A | 150°C | SWITCHING | 0.0072Ohm | 38 ns | SILICON | P-Channel | 7.2m Ω @ 15A, 10V | 2.5V @ 250μA | 3595pF @ 15V | 102nC @ 10V | 10ns | 8 ns | 25V | -30V | 35A | 35A Tc | 30V | 20 mJ | 4.5V 10V | ±25V |