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SI2301CDS-T1-GE3

MOSFET P-CH 20V 3.1A SOT23-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2301CDS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 139
  • Description: MOSFET P-CH 20V 3.1A SOT23-3 (Kg)

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Details

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Parameters
Input Capacitance 405pF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 90mOhm
Rds On Max 112 mΩ
Nominal Vgs -400 mV
Height 1.12mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3 (TO-236)
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 112mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 860mW Ta 1.6W Tc
Element Configuration Single
Power Dissipation 1.6W
Turn On Delay Time 11 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.1A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) -3.1A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
See Relate Datesheet