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SI2302DS,215

MOSFET N-CH 20V 2.5A SOT23


  • Manufacturer: NXP USA Inc.
  • Origchip NO: 568-SI2302DS,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 705
  • Description: MOSFET N-CH 20V 2.5A SOT23 (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 830mW Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 650mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
JEDEC-95 Code TO-236AB
Drain Current-Max (Abs) (ID) 2.5A
Drain-source On Resistance-Max 0.085Ohm
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
See Relate Datesheet