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  • SI2303BDS-T1-E3

SI2303BDS-T1-E3

Trans MOSFET P-CH 30V 1.3A 3-Pin SOT-23 T/R


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2303BDS-T1-E3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 261
  • Description: Trans MOSFET P-CH 30V 1.3A 3-Pin SOT-23 T/R (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 200mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Voltage 30V
Max Supply Voltage 36V
Min Supply Voltage 13V
Power Dissipation-Max 700mW Ta
Element Configuration Single
Current 164A
Operating Mode ENHANCEMENT MODE
Power Dissipation 900mW
Turn On Delay Time 55 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.49A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 1.3A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 22V
Min Dual Supply Voltage 7V
Drain to Source Breakdown Voltage 30V
Nominal Vgs -3 V
Height 1.02mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet