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  • SI2303CDS-T1-E3

SI2303CDS-T1-E3

MOSFET P-CH 30V 2.7A SOT23-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2303CDS-T1-E3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 676
  • Description: MOSFET P-CH 30V 2.7A SOT23-3 (Kg)

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Details

Tags

Parameters
Subcategory Other Transistors
Turn-Off Delay Time 12 ns
Technology MOSFET (Metal Oxide)
Continuous Drain Current (ID) 1.9A
Terminal Position DUAL
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.7A
Terminal Form GULL WING
Drain to Source Breakdown Voltage -30V
Peak Reflow Temperature (Cel) 260
Height 1.02mm
Time@Peak Reflow Temperature-Max (s) 30
Length 3.04mm
Width 1.4mm
Pin Count 3
Radiation Hardening No
Number of Elements 1
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Number of Channels 1
Power Dissipation-Max 2.3W Tc
Factory Lead Time 14 Weeks
Element Configuration Single
Mount Surface Mount
Mounting Type Surface Mount
Operating Mode ENHANCEMENT MODE
Package / Case TO-236-3, SC-59, SOT-23-3
Power Dissipation 2.3W
Number of Pins 3
Turn On Delay Time 36 ns
Weight 1.437803g
FET Type P-Channel
Transistor Element Material SILICON
Transistor Application SWITCHING
Operating Temperature -55°C~150°C TJ
Rds On (Max) @ Id, Vgs 190m Ω @ 1.9A, 10V
Packaging Tape & Reel (TR)
Vgs(th) (Max) @ Id 3V @ 250μA
Published 2009
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 15V
Series TrenchFET®
JESD-609 Code e3
Current - Continuous Drain (Id) @ 25°C 2.7A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Pbfree Code yes
Part Status Active
Rise Time 37ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Drain to Source Voltage (Vdss) 30V
Number of Terminations 3
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
ECCN Code EAR99
Vgs (Max) ±20V
Resistance 190MOhm
Fall Time (Typ) 37 ns
Terminal Finish Matte Tin (Sn)
See Relate Datesheet