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SI2305ADS-T1-GE3

MOSFET 8.0V 4.1A 1.7W 40 mohms @ 4.5V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2305ADS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 673
  • Description: MOSFET 8.0V 4.1A 1.7W 40 mohms @ 4.5V (Kg)

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Details

Tags

Parameters
Fall Time (Typ) 11 ns
Operating Temperature -50°C~150°C TJ
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) -4.1A
Packaging Tape & Reel (TR)
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5.4A
Published 2014
Drain to Source Breakdown Voltage 8V
Nominal Vgs -800 mV
Radiation Hardening No
Series TrenchFET®
REACH SVHC Unknown
JESD-609 Code e3
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 40MOhm
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Power Dissipation-Max 960mW Ta 1.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Mount Surface Mount
FET Type P-Channel
Mounting Type Surface Mount
Transistor Application SWITCHING
Package / Case TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs 40m Ω @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 4V
Number of Pins 3
Current - Continuous Drain (Id) @ 25°C 5.4A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Transistor Element Material SILICON
Vgs (Max) ±8V
See Relate Datesheet