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  • SI2305CDS-T1-GE3

SI2305CDS-T1-GE3

MOSFET 8.0V 5.8A 1.7W 35mohm @ 4.5V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2305CDS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 441
  • Description: MOSFET 8.0V 5.8A 1.7W 35mohm @ 4.5V (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 35mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Voltage 8V
Power Dissipation-Max 960mW Ta 1.7W Tc
Element Configuration Single
Current 58A
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 4V
Current - Continuous Drain (Id) @ 25°C 5.8A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 8V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) -4.4A
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -8V
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet