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  • SI2308BDS-T1-GE3

SI2308BDS-T1-GE3

VISHAY - SI2308BDS-T1-GE3 - MOSFET Transistor, N Channel, 2.3 A, 60 V, 0.13 ohm, 20 V, 3 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2308BDS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 287
  • Description: VISHAY - SI2308BDS-T1-GE3 - MOSFET Transistor, N Channel, 2.3 A, 60 V, 0.13 ohm, 20 V, 3 V (Kg)

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Details

Tags

Parameters
Drain Current-Max (Abs) (ID) 1.9A
Drain-source On Resistance-Max 0.156Ohm
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Silver (Ag)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.09W Ta 1.66W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.09W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 156m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 30V
Current - Continuous Drain (Id) @ 25°C 2.3A Tc
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 2.3A
See Relate Datesheet