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  • SI2315BDS-T1-GE3

SI2315BDS-T1-GE3

MOSFET P-CH 12V 3A SOT23-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2315BDS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 854
  • Description: MOSFET P-CH 12V 3A SOT23-3 (Kg)

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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) -3A
Threshold Voltage -900mV
Factory Lead Time 14 Weeks
Gate to Source Voltage (Vgs) 8V
Contact Plating Tin
Drain-source On Resistance-Max 0.05Ohm
Mount Surface Mount
Mounting Type Surface Mount
Drain to Source Breakdown Voltage -12V
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Nominal Vgs -900 mV
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Height 1.02mm
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Length 3.04mm
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Width 1.4mm
Number of Terminations 3
ECCN Code EAR99
Radiation Hardening No
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
REACH SVHC Unknown
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
RoHS Status ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Voltage 12V
Power Dissipation-Max 750mW Ta
Element Configuration Single
Current 3A
Operating Mode ENHANCEMENT MODE
Power Dissipation 750mW
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 50m Ω @ 3.85A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 715pF @ 6V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 35ns
See Relate Datesheet