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SI2316DS-T1-E3

MOSFET 30V 3.4A 0.96W 50mohm @ 10V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2316DS-T1-E3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 426
  • Description: MOSFET 30V 3.4A 0.96W 50mohm @ 10V (Kg)

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Details

Tags

Parameters
Number of Elements 1
Number of Channels 1
Voltage 30V
Power Dissipation-Max 700mW Ta
Element Configuration Single
Current 2A
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 3.4A, 10V
Factory Lead Time 14 Weeks
Mount Surface Mount
Vgs(th) (Max) @ Id 800mV @ 250μA (Min)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds 215pF @ 15V
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C 2.9A Ta
Packaging Tape & Reel (TR)
Published 2011
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Series TrenchFET®
Rise Time 9ns
JESD-609 Code e3
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Pbfree Code yes
Fall Time (Typ) 9 ns
Part Status Active
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 3.4A
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate to Source Voltage (Vgs) 20V
Number of Terminations 3
Nominal Vgs 800 mV
Height 1.02mm
ECCN Code EAR99
Length 3.04mm
Width 1.4mm
Resistance 50mOhm
Terminal Finish Matte Tin (Sn)
Radiation Hardening No
Subcategory FET General Purpose Power
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Technology MOSFET (Metal Oxide)
Lead Free Lead Free
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
See Relate Datesheet