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  • SI2319DS-T1-E3

SI2319DS-T1-E3

MOSFET P-CH 40V 2.3A SOT23-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2319DS-T1-E3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 322
  • Description: MOSFET P-CH 40V 2.3A SOT23-3 (Kg)

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Details

Tags

Parameters
Pin Count 3
Number of Elements 1
Number of Channels 1
Voltage 40V
Power Dissipation-Max 750mW Ta
Element Configuration Single
Current 3A
Operating Mode ENHANCEMENT MODE
Power Dissipation 750mW
Factory Lead Time 14 Weeks
Turn On Delay Time 7 ns
Contact Plating Tin
FET Type P-Channel
Transistor Application SWITCHING
Mount Surface Mount
Rds On (Max) @ Id, Vgs 82m Ω @ 3A, 10V
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 20V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Package / Case TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Number of Pins 3
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Weight 1.437803g
Vgs (Max) ±20V
Transistor Element Material SILICON
Fall Time (Typ) 15 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) -3A
Operating Temperature -55°C~150°C TJ
Threshold Voltage -3V
Packaging Tape & Reel (TR)
Gate to Source Voltage (Vgs) 20V
Published 2011
Drain to Source Breakdown Voltage -40V
Series TrenchFET®
Max Junction Temperature (Tj) 150°C
Nominal Vgs -3 V
JESD-609 Code e3
Height 1.12mm
Pbfree Code yes
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Part Status Active
Lead Free Lead Free
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 82mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
See Relate Datesheet