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  • SI2323CDS-T1-GE3

SI2323CDS-T1-GE3

MOSFET P-CH 20V 6A SOT-23


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2323CDS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 122
  • Description: MOSFET P-CH 20V 6A SOT-23 (Kg)

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Details

Tags

Parameters
ECCN Code EAR99
Resistance 39mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.25W Ta 2.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39m Ω @ 4.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Rise Time 23ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) -4.6A
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage -20V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -400 mV
Height 1.12mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
See Relate Datesheet