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  • SI2329DS-T1-GE3

SI2329DS-T1-GE3

VISHAY SI2329DS-T1-GE3 MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2329DS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 309
  • Description: VISHAY SI2329DS-T1-GE3 MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV (Kg)

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Details

Tags

Parameters
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 5.3A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1485pF @ 4V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Factory Lead Time 14 Weeks
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Rise Time 22ns
Mount Surface Mount
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Mounting Type Surface Mount
Vgs (Max) ±5V
Package / Case TO-236-3, SC-59, SOT-23-3
Fall Time (Typ) 20 ns
Number of Pins 3
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) -5.3A
Transistor Element Material SILICON
Threshold Voltage -350mV
Operating Temperature -55°C~150°C TJ
Gate to Source Voltage (Vgs) 5V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage -8V
Packaging Tape & Reel (TR)
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Published 2014
Radiation Hardening No
See Relate Datesheet