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  • SI2333CDS-T1-GE3

SI2333CDS-T1-GE3

MOSFET P-CH 12V 7.1A SOT-23


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2333CDS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 813
  • Description: MOSFET P-CH 12V 7.1A SOT-23 (Kg)

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Details

Tags

Parameters
Number of Elements 1
Number of Channels 1
Voltage 12V
Power Dissipation-Max 1.25W Ta 2.5W Tc
Element Configuration Single
Current 71A
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1225pF @ 6V
Current - Continuous Drain (Id) @ 25°C 7.1A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 45 ns
Factory Lead Time 14 Weeks
Continuous Drain Current (ID) -5.1A
Contact Plating Tin
Mount Surface Mount
Threshold Voltage -400mV
Mounting Type Surface Mount
Gate to Source Voltage (Vgs) 8V
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Drain to Source Breakdown Voltage -12V
Weight 1.437803g
Transistor Element Material SILICON
Max Junction Temperature (Tj) 150°C
Nominal Vgs -1 V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Height 1.12mm
Published 2016
Length 3.04mm
Series TrenchFET®
Width 1.4mm
JESD-609 Code e3
Pbfree Code yes
Radiation Hardening No
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH SVHC Unknown
Number of Terminations 3
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Lead Free Lead Free
Resistance 35mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
See Relate Datesheet