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  • SI2333DS-T1-E3

SI2333DS-T1-E3

MOSFET P-CH 12V 4.1A SOT23-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2333DS-T1-E3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 385
  • Description: MOSFET P-CH 12V 4.1A SOT23-3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 32mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 750mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 750mW
Turn On Delay Time 25 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 5.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 6V
Current - Continuous Drain (Id) @ 25°C 4.1A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time 45ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) -4.1A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -1 V
Height 1.12mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet